elektronische bauelemente SSD04N65J 4a, 650v, r ds(on) 3 n-ch enhancement mode power mosfet 28-dec-2015 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252 rohs compliant product a suffix of -c specifies halogen free description this advanced high voltage mosfet is designed to st and high energy in the avalanche mode and switch efficiently . this new high energy device also offers a drain-to-source diode w ith a fast recovery time. it is designed for high voltage, high speed s witching applications such as power suppliers, converters, power motor co ntrol, and bridge circuits. features high current rating lower r ds(on) lower capacitance lower total gate charge tighter vsd specifications specified avalanche energy package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v continuous drain current i d 4 a pulsed drain current i dm 16 a single pulsed avalanche energy 1 e as 280 mj power dissipation p d 1.25 w maximum lead temperature for soldering purposes@1/8 from case for 5 seconds t l 260 c operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance from junction to ambient r ja 100 c/ w 1 gate 3 source 2 drain a c d n o p g e f h k j m b mill imeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.186 2.386 b 4.95 5.50 k 0.64 1.14 c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD04N65J 4a, 650v, r ds(on) 3 n-ch enhancement mode power mosfet 28-dec-2015 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise noted) parameter symbol min. typ. max. unit test condition off characteristics drain-source breakdown voltage bv dss 650 - - v v gs =0, i d =250 a drain-source diode forward voltage 2 v sd - - 1.5 v v gs =0, i s =4a drain-source leakage current i dss - - 25 a v ds =600v, v gs =0 gate-source leakage current 2 i gss - - 100 na v ds =0v, v gs =30v on characteristics 2 gate threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a static drain-source on-resistance r ds(on) - - 3 v gs =10v, i d =2a dynamic characteristics input capacitance c iss - 760 - output capacitance c oss - 180 - reverse transfer capacitance c rss - 20 - pf v ds =25v v gs =0 f=1mhz switching characteristics total gate charge q g - 5 - gate-source charge q gs - 2.7 - gate-drain (miller) change q gd - 2 - nc v ds =480v v gs =10v i d =4a turn-on delay time t d(on) - 20 - rise time t r - 10 - turn-off delay time t d(off) - 40 - fall time t f - 20 - ns v dd =300v v gs =10v r g =9.1 i d =4a notes: 1. e as condition: l=30mh, i l =4a, v dd =100v, r g =25 , starting t j =25c. 2. pulse test: pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSD04N65J 4a, 650v, r ds(on) 3 n-ch enhancement mode power mosfet 28-dec-2015 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
|
